�Y�x�Y(ji��)��������(y��ng)�̹������S�r��������(w��)
- ����(y��ng)��
- ��̖
- Ʒ��
- ���b
- ��̖
- ��攵(sh��)��
- ��ע
- ԃ�r
-
��̖о������̄�(w��)�����ڣ�����˾
13��
0755-8366305618922805453��18929374037��18922803401�B0755-82537787�����и���^(q��)�A��(qi��ng)��·1019̖�A��(qi��ng)�V��D��23��11016516
-
-
-
-
�����ջ�
STL21N65M5 PDF�Y��
- �Y�����d
- �����̣�STMicroelectronics
- PDF�������1.9 Mbytes
- PDF�ļ�퓔�(sh��)����16�
- ������MOSFET Mdmesh 650V .19 Ohms 1mm TO-220 17A (ID)
STL210N4LF7AG���g(sh��)Ҏ(gu��)��
- SeriesAutomotive, AEC-Q101, STripFET? F7
- PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel?
- FET TypeN-Channel
- TechnologyMOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)40 V
- Current - Continuous Drain (Id) @ 25��C120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
- Rds On (Max) @ Id, Vgs1.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250��A
- Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
- Vgs (Max)��20V
- Input Capacitance (Ciss) (Max) @ Vds4210 pF @ 25 V
- FET Feature-
- Power Dissipation (Max)150W (Tc)
- Operating Temperature-55��C ~ 175��C (TJ)
- Mounting TypeSurface Mount
- Supplier Device PackagePowerFlat? (5x6)
- Package / Case8-PowerVDFN
ُ�I����ԃ�a(ch��n)ƷՈ?zh��)ԃ�r��Ϣ��(3������������õ��؏�(f��))
STL210N4LF7AG���P(gu��n)��̖